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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF278 VHF push-pull power MOS transistor
Product Specification Supersedes data of October 1992 1996 Oct 21
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability. APPLICATIONS * Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
1 2
BLF278
PINNING - SOT262A1 PIN 1 2 3 4 5 SYMBOL d1 d2 g1 g2 s DESCRIPTION drain 1 drain 2 gate 1 gate 2 source
d g s g 5 3
Top view
5 4
MAM098
d
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B CW, class-C CW, class-AB f (MHz) 108 108 225 VDS (V) 50 50 50 PL (W) 300 300 250 Gp (dB) >20 typ. 18 >14 typ. 16 D (%) >60 typ. 80 >50 typ. 55
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1996 Oct 21
2
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL Per transistor section VDS VGS ID Ptot Tstg Tj drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature up to Tmb = 25 C total device; both sections equally loaded - - - - -65 - 110 20 18 500 150 200 PARAMETER CONDITIONS MIN.
BLF278
MAX.
UNIT
V V A W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER CONDITIONS VALUE max. 0.35 max. 0.15 K/W K/W UNIT
thermal resistance from junction total device; both sections to mounting base equally loaded. thermal resistance from mounting base to heatsink total device; both sections equally loaded.
MRA988
handbook, halfpage
100
handbook, halfpage
500
MGE616
ID (A)
Ptot (W)
400 (2) (1) (1) (2) 300
10 200
100
1
1
10
100 VDS (V)
500
0
0
40
80
120 Th (C)
160
Total device; both sections equally loaded. (1) Current is this area may be limited by RDSon. (2) Tmb = 25 C.
Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1996 Oct 21
3
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per transistor section V(BR)DSS IDSS IGSS VGSth VGS gfs gfs1/gfs2 RDSon IDSX Cis Cos Crs Cd-f drain-source breakdown voltage VGS = 0; ID = 50 mA drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of both sections forward transconductance forward transconductance ratio of both sections drain cut-off current input capacitance output capacitance feedback capacitance drain-flange capacitance VGS = 0; VDS = 50 V VGS = 20 V; VDS = 0 VDS = 10 V; ID = 50 mA VDS = 10 V; ID = 50 mA VDS = 10 V; ID = 5 A VDS = 10 V; ID = 5 A 110 - - 2 - 4.5 0.9 - - - - - - - - - - - 6.2 - 0.2 25 480 190 14 5.4 - PARAMETER CONDITIONS MIN. TYP.
BLF278
MAX.
UNIT
V mA A V mV S
2.5 1 4.5 100 - 1.1 0.3 - - - - -
drain-source on-state resistance VGS = 10 V; ID = 5 A VGS = 10 V; VDS = 10 V VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz
A pF pF pF pF
handbook, halfpage
0
MGE623
handbook, halfpage
30
MGE622
T.C. (mV/K) -1
ID (A) 20
-2
-3 10 -4
-5 10-2
10-1
0 1 ID (A) 10 0 5 10 VGS (V) 15
VDS = 10 V. VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current; typical values per section.
Fig.5
Drain current as a function of gate-source voltage; typical values per section.
1996 Oct 21
4
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
handbook, halfpage
400
MGE621
handbook, halfpage
1200
MGE615
RDSon (m) 300
C (pF) 800
200
Cis 400
100
Cos
0 0 50 100 Tj (C) VGS = 10 V; ID = 5 A. 150
0 0 20 40 VDS (V) 60
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature; typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage; typical values per section.
handbook, halfpage
400
MGE620
Crs (pF) 300
200
100
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage; typical values per section.
1996 Oct 21
5
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
APPLICATION INFORMATION
BLF278
Class-B operation RF performance in CW operation in a common source push-pull test circuit. Th = 25 C; Rth mb-h = 0.15 K/W unless otherwise specified. RGS = 4 per section; optimum load impedance per section = 3.2 + j4.3 (VDS = 50 V). MODE OF OPERATION CW, class-B CW, class-C Ruggedness in class-B operation The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the conditions: VDS = 50 V; f = 108 MHz at rated load power. f (MHz) 108 108 VDS (V) 50 50 IDQ (A) 2 x 0.1 VGS = 0 PL (W) 300 300 Gp (dB) >20 typ. 22 typ. 18 D (%) >60 typ. 70 typ. 80
1996 Oct 21
6
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
handbook, halfpage
30
MGE682
MGE683
handbook, halfpage
80
Gp (dB) 20
D (%) (1) 60 (2) (1) 40 (2)
(2) (1)
10 20
0 0 200 400 PL (W) 600
0 0 200 400 PL (W) 600
Class-B operation; VDS = 50 V; IDQ = 2 x 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 (per section); RGS = 4 (per section). (1) Th = 25 C. (2) Th = 70 C.
Class-B operation; VDS = 50 V; IDQ = 2 x 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 (per section); RGS = 4 (per section). (1) Th = 25 C. (2) Th = 70 C.
Fig.9
Power gain as a function of load power, typical values.
Fig.10 Efficiency as a function of load power, typical values.
handbook, halfpage
600
MGE684
PL (W) (1) 400 (2)
200
0 0 5 10 Pi (W) 15
Class-B operation; VDS = 50 V; IDQ = 2 x 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 (per section); RGS = 4 (per section). (1) Th = 25 C. (2) Th = 70 C.
Fig.11 Load power as a function of input power, typical values.
1996 Oct 21
7
1996 Oct 21
+VDD1 C20 C16 C21 R2 C8 C12 R8 L11 A R3 C13 C9 C17 C22 R4 C31 L21 D.U.T. L12 L9 L13 L17 L19 L1 C33 R10 L3 L5 L7
Philips Semiconductors
handbook, full pagewidth
50 input
C3
T1 C5 C34 C6 C7 C26 C27 C28 C29 C30
C1 R1
,,
50 output L22 L23
VHF push-pull power MOS transistor
C2 L2 C32 L4 L6 L8
C4
8
L10 L14 L18 L20 R5 L15 C10 C14 C18 A R6 C15 C35 R7 C37 C11 C19 C25 +VDD2 R9 L16 C24 C23
,,,, ,,,, ,,,, ,,,, ,,
MGE688
R11
+VDD1
IC1
C36
Product Specification
BLF278
Fig.12 Class-B test circuit at f = 108 MHz.
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
List of components (see Figs 12 and 13). COMPONENT DESCRIPTION VALUE 22 pF, 500 V 100 pF + 68 pF in parallel, 500 V 5 to 60 pF 2 x 100 pF + 1 x 120 pF in parallel, 500 V 100 nF, 500 V DIMENSIONS
BLF278
CATALOGUE NO.
C1, C2, C33, C34 multilayer ceramic chip capacitor; note 1 C3, C4 C5, C6, C28 C7 multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor
2222 809 08003
C8, C11, C12, C15, C16, C19, C36 C9, C10, C13, C14, C20, C25 C17, C18, C22, C23 C21, C24, C35 C26
2222 852 47104
multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 1 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 2 x grade 3B Ferroxcube wideband HF chokes in parallel 4 turns enamelled 2 mm copper wire
1 nF, 500 V 470 pF, 500 V 10 F, 63 V 2 x 15 pF + 1 x 18 pF in parallel, 500 V 3 x 15 pF in parallel, 500 V 2 x 18 pF + 1 x 15 pF in parallel, 500 V 2 to 18 pF 3 x 43 pF in parallel, 500 V 43 43 43 43 43 length 57.5 mm width 6 mm length 29.5 mm width 6 mm length 14 mm width 6 mm length 6 mm width 6 mm length 17.5 mm width 6 mm 4312 020 36642 85 nH length 13.5 mm int. dia. 10 mm leads 2 x 7 mm length 19.5 mm width 6 mm 2222 809 09006
C27 C29
C30 C31, C32 L1, L2 L3, L4 L5, L6 L7, L8 L9, L10 L11, L16 L12, L15
L13, L14
stripline; note 2
43
1996 Oct 21
9
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
COMPONENT L17, L18 L19, L20 L21, L23 L22
DESCRIPTION stripline; note 2 stripline; note 2 stripline; note 2 semi-rigid cable; note 3 43 43 50 50
VALUE
DIMENSIONS length 24.5 mm width 6 mm length 66 mm width 6 mm length 160 mm width 4.8 mm ext. dia. 3.6 mm outer conductor length 160 mm
CATALOGUE NO.
R1 R2, R7 R3, R6 R4, R5 R8, R9 R10 R11 IC1 T1 Notes
metal film resistor 10 turn potentiometer metal film resistor metal film resistor metal film resistor metal film resistor metal film resistor voltage regulator 78L05 1:1 Balun; 7 turns type 4C6 50 coaxial cable wound around toroid
10 , 0.4 W 50 k 3 x 12.1 in parallel, 0.4 W 10 ; 0.4 W 10 5%, 1 W 4 x 10 in parallel, 1 W 5.11 k, 1 W 14 x 9 x 5 mm 4322 020 90770
1. American Technical Ceramics capacitor, type 100B or capacitor of same quality. 2. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass PTFE dielectric (r = 2.2), thickness 116 inch; thickness of copper sheet 2 x 35 m. 3. L22 is soldered on to stripline L21.
1996 Oct 21
10
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
handbook, full pagewidth
130 strap
150
strap strap
strap
strap
100
strap strap
strap
C20 V DD1 50 input T1 IC1 R11 C36 C11 C8 R2 and R7 C9 C13 R3 R4 C7 L5 L6 R5 R6 C10 C14 C18 C23 L7 L8 C17 slider R2 C12 C1 C3 R1 C2 C4 C35 C22 L11 C16 R8 L11 V DD1 L12 L9 L10 L13 C26 L14 L15 L17 C27 L18 L21 C31 L19 C29 C28 L20 L23 V DD2 R10 C30 C34 C32 C33 L22 C21 50 output
L1 C5 L2 C6
L3 L4
C15 slider R7
L16 R9 L16 C19
C24
MBC438
C25
Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.13 Printed-circuit board and component layout for 108 MHz class-B test circuit.
1996 Oct 21
11
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
MGE685
handbook, halfpage
2
handbook, halfpage
8
MGE686
Zi () 1
ri
ZL () 6
RL
XL 0 4
-1 xi
2
-2
0 25 75 125 f (MHz) 175 25 75 125 f (MHz) 175
Class-B operation; VDS = 50 V; IDQ = 2 x 0.1 A; RGS = 4 (per section); PL = 300 W.
Class-B operation; VDS = 50 V; IDQ = 2 x 0.1 A; RGS = 4 (per section); PL = 300 W.
Fig.14 Input impedance as a function of frequency (series components), typical values per section.
Fig.15 Load impedance as a function of frequency (series components), typical values per section.
handbook, halfpage
30
MGE687
Gp (dB) 20
handbook, halfpage
10
Zi
ZL
MBA379
0 25 75 125 f (MHz) 175
Class-B operation; VDS = 50 V; IDQ = 2 x 0.1 A; RGS = 4 (per section); PL = 300 W.
Fig.16 Definition of MOS impedance.
Fig.17 Power gain as a function of frequency, typical values per section.
1996 Oct 21
12
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
Class-AB operation RF performance in CW operation in a common source push-pull test circuit. Th = 25 C; Rth mb-h = 0.15 K/W unless otherwise specified. RGS = 2.8 per section; optimum load impedance per section = 0.74 + j2 ; (VDS = 50 V). MODE OF OPERATION CW, class-AB f (MHz) 225 VDS (V) 50 IDQ (A) 2 x 0.5 PL (W) 250 Gp (dB) >14 typ. 16 D (%) >50 typ. 55
Ruggedness in class-AB operation The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the conditions: VDS = 50 V; f = 225 MHz at rated output power.
1996 Oct 21
13
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
MGE614
handbook, halfpage
20
handbook, halfpage
60
MGE612
(1) Gp (dB) (2)
D (%) (1) 40 (2)
10
20
0 0 100 200 PL (W) Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C. 300
0 0 100 200 PL (W) 300
Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C.
Fig.18 Power gain as a function of load power, typical values.
Fig.19 Efficiency as a function of load power, typical values.
handbook, halfpage
400
MGE613
PL (W) 300 (1) (2)
200
100
0 0 5 10 Pi (W) 15
Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C.
Fig.20 Load power as a function of input power, typical values.
1996 Oct 21
14
1996 Oct 21
+VDD1 C22 C23 C14
handbook, full pagewidth
R2 C10 C15 C11 C8 C16 C24 R8 L14
Philips Semiconductors
A R3
R4 D.U.T. L12 L22 L18 L20 C31
L15
L1 L4 C33 R10 L6 L8 L10
C3
C1 R1 C5 C20 C34 C21 C28 C29 C30 C6 C7 C4 L5 L13 L19 L21 C32 L7 L9 L11
,,,, ,,
L23
50 input
L2
50 output
VHF push-pull power MOS transistor
C2
,,, ,,,
R5 L16 C9 C17 C12 C25 C18 R6 C13 C35 R9 R7 C37 C36 C19 C27 +VDD2 C26 L17 IC1 A
L3
15 Fig.21 Class-AB test circuit at f = 225 MHz.
,,, ,,, ,,,, ,,
L24
MGE617
+VDD1
R11
C38
Product Specification
BLF278
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
List of components (see Figs 21 and 22). COMPONENT C1, C2 C3, C4, C31, C32 C5 C6, C30 C7 C8, C9, C15, C18 C10, C13, C14, C19, C36 C11, C12 C16, C17 C20 C21 C22, C27, C37, C38 C23, C26, C35 C24, C25 C28 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer film dielectric trimmer multilayer ceramic chip capacitor; note 1 MKT film capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 2 semi-rigid cable; note 3 VALUE 27 pF, 500 V 3 x 18 pF in parallel, 500 V 4 to 40 pF 2 to 18 pF 100 pF, 500 V 1 F, 63 V 100 nF, 50 V 2 x 1 nF in parallel, 500 V 220 F, 63 V 3 x 33 pF in parallel, 500 V 2 to 9 pF 1 nF, 500 V 10 F, 63 V 2 x 470 pF in parallel, 500 V 2 x 10 pF + 1 x 18 pF in parallel, 500 V 2 x 5.6 pF in parallel, 500 V 5.6 pF, 500 V 50 50 length 80 mm width 4.8 mm ext. dia. 3.6 mm outer conductor length 80 mm length 24 mm width 6 mm length 14.5 mm width 6 mm length 4.4 mm width 6 mm length 3.2 mm width 6 mm length 15 mm width 6 mm DIMENSIONS
BLF278
CATALOGUE NO.
2222 809 08002 2222 809 09006
2222 371 11105 2222 852 47104
2222 809 09005
C29 C33, C34 L1, L3, L22, L24 L2, L23
L4, L5 L6, L7 L8, L9 L10, L11 L12, L13
stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2
43 43 43 43 43
1996 Oct 21
16
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
COMPONENT L14, L17 L15, L16
DESCRIPTION 2 x grade 3B Ferroxcube wideband HF chokes in parallel 134 turns enamelled 2 mm copper wire stripline; note 2 stripline; note 2 metal film resistor 10 turns potentiometer metal film resistor metal film resistor metal film resistor metal film resistor metal film resistor voltage regulator 78L05
VALUE
DIMENSIONS
CATALOGUE NO. 4312 020 36642
40 nH
int. dia. 10 mm leads 2 x 7 mm space 1 mm length 13 mm width 6 mm length 29.5 mm width 6 mm
L18, L19 L20, L21 R1 R2, R7 R3, R6 R4, R5 R8, R9 R10 R11 IC1 Notes
43 43 10 , 0.4 W 50 k 1 k, 0.4 W 2 x 5.62 , in parallel, 0.4 W 10 5%, 1 W 4 x 42.2 in parallel, 1 W 5.11 k, 1 W
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. L1, L3 to L13, L18 to L22 and L24 are microstriplines on a double copper-clad printed-circuit board, with fibre-glass reinforced PTFE dielectric (r = 2.2), thickness 116 inch; thickness of copper sheet 2 x 35 m. 3. L2 and L23 are soldered on to striplines L1 and L24 respectively.
1996 Oct 21
17
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
handbook, full pagewidth
119
130
strap strap
strap Hollow rivets strap Hollow rivets
strap 100 strap
strap strap
C24 VDD1 L2 L1 C1 50 input R1 C2 C4 C13 R6 L3 slider R7 R11 C38 IC1 to R2,R7 C36 C16 C37 C11 C14 L14 R8 L14 L15 L12 C20 L13
C22 C23 L22 VDD1 R10 50 output
C15
C35 slider R2
C8
C3
C10 R3 R4 L4 C6 L6 L8 L10 C5 C7 L7 L9 L11 L5 R5 C9
C30 C31C33 L18 C28 L20 C21 C29 L19 L21 C34 C32 L16 VDD2 L23 C26 C27
C12
C17
C18
L17 R9 L17 C19 C25
L24
MBC436
Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.22 Printed-circuit board and component layout for 225 MHz class-AB test circuit.
1996 Oct 21
18
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
handbook, halfpage
2
MGE611
handbook, halfpage
3
MGE625
zi () 1 ri
ZL () 2
XL
0 1 RL
xi -1
-2 150
200
f (MHz)
250
0 150
200
f (MHz)
250
Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; RGS = 2.8 (per section); PL = 250 W.
Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; RGS = 2.8 (per section); PL = 250 W.
Fig.23 Input impedance as a function of frequency (series components), typical values per section.
Fig.24 Load impedance as a function of frequency (series components), typical values per section.
handbook, halfpage
20
MGE624
Gp (dB)
handbook, halfpage
10
Zi
ZL
MBA379
0 150
200
f (MHz)
250
Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; RGS = 2.8 (per section); PL = 250 W.
Fig.25 Definition of MOS impedance.
Fig.26 Power gain as a function of frequency, typical values per section.
1996 Oct 21
19
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
PACKAGE OUTLINE
BLF278
0.25 11 max 0.13 2.92 2.29 1.02 21.85 seating plane 1.65 5.8 max 11 max
0.25 M 5.9 5.5 (4x) 2.54 1 2
10.4 max 5 3 5.525 11.05 27.94 34.3 max Dimensions in mm. 4
3.3 9.8 15.6 3.0 max
MSA285 - 2
Fig.27 SOT262A1.
1996 Oct 21
20
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF278
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 21
21

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